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  1 motorola smallsignal transistors, fets and diodes device data    npn silicon maximum ratings rating symbol bc846 bc847 bc850 bc848 bc849 unit collector emitter voltage v ceo 65 45 30 v collector base voltage v cbo 80 50 30 v emitter base voltage v ebo 6.0 6.0 5.0 v collector current e continuous i c 100 100 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board, (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r  ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r  ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking bc846alt1 = 1a; bc846blt1 = 1b; bc847alt1 = 1e; bc847blt1 = 1f; bc847clt1 = 1g; bc848alt1 = 1j; bc848blt1 = 1k; bc848clt1 = 1l electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector emitter breakdown voltage bc846a,b (i c = 10 ma) bc847a,b,c, bc850b,c bc848a,b,c, bc849b,c v (br)ceo 65 45 30 e e e e e e v collector emitter breakdown voltage bc846a,b (i c = 10 m a, v eb = 0) bc847a,b,c, bc850b,c bc848a,b,c, bc849b,c v (br)ces 80 50 30 e e e e e e v collector base breakdown voltage bc846a,b (i c = 10  a) bc847a,b,c, bc850b,c bc848a,b,c, bc849b,c v (br)cbo 80 50 30 e e e e e e v emitter base breakdown voltage bc846a,b (i e = 1.0  a) bc847a,b,c bc848a,b,c, bc849b,c, bc850b,c v (br)ebo 6.0 6.0 5.0 e e e e e e v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo e e e e 15 5.0 na m a 1. fr5 = 1.0 x 0.75 x 0.062 in 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. thermal clad is a trademark of the bergquist company. preferred devices are motorola recommended choices for future use and best overall value. order this document by bc846alt1/d 
semiconductor technical data 
  
       bc846, bc847 and bc848 are motorola preferred devices 1 2 3 case 318 08, style 6 sot 23 (to 236ab) ? motorola, inc. 1997 collector 3 1 base 2 emitter rev 1

  
    
   2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain bc846a, bc847a, bc848a (i c = 10 m a, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846a, bc847a, bc848a bc846b, bc847b, bc848b, bc849b, bc850b bc847c, bc848c, bc849c, bc850c h fe e e e 110 200 420 90 150 270 180 290 520 e e e 220 450 800 e collector emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) e e e e 0.25 0.6 v base emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.7 0.9 e e v base emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 e 660 e 700 770 mv small signal characteristics current gain e bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 e e mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo e e 4.5 pf noise figure (i c = 0.2 ma, bc846a, bc847a, bc848a v ce = 5.0 vdc, r s = 2.0 k w , bc846b, bc847b, bc848b f = 1.0 khz, bw = 200 hz) bc847c, bc848c bc849b,c, bc850b,c nf e e e e 10 4.0 db figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collectoremitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c 55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0

  
    
   3 motorola smallsignal transistors, fets and diodes device data bc847/bc848 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 figure 7. dc current gain i c , collector current (ma) figure 8. aono voltage i c , collector current (ma) 2.0 6.0 40 80 100 200 300 400 60 20 40 30 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v v ce = 10 v t a = 25 c figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collectoremitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma h fe , dc current gain (normalized) v, voltage (volts) c, capacitance (pf) f , currentgain bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 55 c to 125 c q vb for v be

  
    
   4 motorola smallsignal transistors, fets and diodes device data bc846 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f , currentgain bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib

  
    
   5 motorola smallsignal transistors, fets and diodes device data information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

  
    
   6 motorola smallsignal transistors, fets and diodes device data package dimensions d j k l a c b s h g v 3 1 2 case 31808 issue ae sot23 (to236ab) style 6: pin 1. base 2. emitter 3. collector dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps bc846alt1/d ?


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